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HfOx as RRAM material – First principles insights on the working principles

dc.contributor.authorClima, Sergiu
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorJurczak, Gosia
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-22T00:59:20Z
dc.date.available2021-10-22T00:59:20Z
dc.date.issued2014
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23660
dc.sourceIIOimport
dc.titleHfOx as RRAM material – First principles insights on the working principles
dc.typeJournal article
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecGovoreanu, Bogdan::0000-0001-7210-2979
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage13
dc.source.endpage18
dc.source.journalMicroelectronic Engineering
dc.source.volume120
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931713005741
imec.availabilityPublished - imec


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