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Origin of Meyer-Neldel-type compensation behavior in organic semiconductors at large carrier concentrations: Disorder vs. thermodynamic description

dc.contributor.authorFishchuk, Ivan I.
dc.contributor.authorKadashchuk, Andriy
dc.contributor.authorMityashin, Alexander
dc.contributor.authorGavrilyuk, M.M.
dc.contributor.authorKöhler, A.
dc.contributor.authorBässler, H.
dc.contributor.authorGenoe, Jan
dc.contributor.authorSitter, H.
dc.contributor.authorSariciftci, N.S.
dc.date.accessioned2021-10-22T01:28:37Z
dc.date.available2021-10-22T01:28:37Z
dc.date.issued2014
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23818
dc.sourceIIOimport
dc.titleOrigin of Meyer-Neldel-type compensation behavior in organic semiconductors at large carrier concentrations: Disorder vs. thermodynamic description
dc.typeJournal article
dc.contributor.imecauthorKadashchuk, Andriy
dc.contributor.imecauthorGenoe, Jan
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.source.peerreviewyes
dc.source.beginpage245201
dc.source.journalPhysical Review B
dc.source.issue24
dc.source.volume90
dc.identifier.urlhttp://dx.doi.org/10.1103/PhysRevB.90.245201
imec.availabilityPublished - imec


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