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Molecular beam epitaxy and characterization of InAs/Al0.2Ga0.8Sb heterostructures for magnetic sensing applications

dc.contributor.authorBehet, Markus
dc.contributor.authorNemeth, Stefan
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorTümmler, J.
dc.contributor.authorWoitok, J.
dc.contributor.authorGeurts, J.
dc.date.accessioned2021-09-30T11:27:22Z
dc.date.available2021-09-30T11:27:22Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2386
dc.sourceIIOimport
dc.titleMolecular beam epitaxy and characterization of InAs/Al0.2Ga0.8Sb heterostructures for magnetic sensing applications
dc.typeJournal article
dc.contributor.imecauthorNemeth, Stefan
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage428
dc.source.endpage432
dc.source.journalSemiconductor Science and Technology
dc.source.issue4
dc.source.volume13
imec.availabilityPublished - open access


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