Show simple item record

dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorChen, Yangyin
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorDegraeve, Robin
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-22T01:41:31Z
dc.date.available2021-10-22T01:41:31Z
dc.date.issued2014
dc.identifier.issn2162-8726
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23870
dc.sourceIIOimport
dc.titleEvidences of electrode-controlled retention properties in Ta2O5-based resistive-switching memory cells
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageQ79
dc.source.endpageQ81
dc.source.journalECS Solid State Letters
dc.source.issue11
dc.source.volume3
dc.identifier.urlhttp://ssl.ecsdl.org/content/3/11/Q79.short?rss=1
imec.availabilityPublished - open access


Files in this item

Thumbnail

This item appears in the following collection(s)

Show simple item record