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NBTI in nanoscale MOSFETs – The ultimate modeling menchmark

dc.contributor.authorGrasser, T.
dc.contributor.authorRott, K.
dc.contributor.authorReisinger, H.
dc.contributor.authorWaltl, M.
dc.contributor.authorSchanovsky, F.
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-22T01:44:08Z
dc.date.available2021-10-22T01:44:08Z
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23880
dc.sourceIIOimport
dc.titleNBTI in nanoscale MOSFETs – The ultimate modeling menchmark
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage3586
dc.source.endpage3593
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume61
dc.identifier.urlhttp://dx.doi.org/10.1109/TED.2014.2353578
imec.availabilityPublished - imec


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