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First-principles study of oxygen and aluminum defects in $b-Si3N4: Compensation and charge trapping

dc.contributor.authorGrillo, Maria Elena
dc.contributor.authorElliott, Simon D.
dc.contributor.authorRodriguez, Jesus
dc.contributor.authorAnez, Rafael
dc.contributor.authorColl, David Santiago
dc.contributor.authorSuhane, Amit
dc.contributor.authorBreuil, Laurent
dc.contributor.authorArreghini, Antonio
dc.contributor.authorDegraeve, Robin
dc.contributor.authorShariq, Ahmed
dc.contributor.authorBeyer, Volkhard
dc.contributor.authorCzernohorsky, Malte
dc.date.accessioned2021-10-22T01:44:40Z
dc.date.available2021-10-22T01:44:40Z
dc.date.issued2014
dc.identifier.issn0927-0256
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23882
dc.sourceIIOimport
dc.titleFirst-principles study of oxygen and aluminum defects in $b-Si3N4: Compensation and charge trapping
dc.typeJournal article
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.source.peerreviewyes
dc.source.beginpage178
dc.source.endpage183
dc.source.journalComputational Materials Science
dc.source.volume81
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0927025613004631
imec.availabilityPublished - imec


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