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dc.contributor.authorGuo, Weiming
dc.contributor.authorDate, Lucien
dc.contributor.authorPena, Vanessa
dc.contributor.authorBao, X.
dc.contributor.authorMerckling, Clement
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.authorCaymax, Matty
dc.contributor.authorSanchez, E.
dc.contributor.authorVancoille, Eric
dc.contributor.authorBarla, Kathy
dc.contributor.authorThean, Aaron
dc.contributor.authorEyben, Pierre
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-22T01:47:05Z
dc.date.available2021-10-22T01:47:05Z
dc.date.issued2014
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23890
dc.sourceIIOimport
dc.titleSelective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)
dc.typeJournal article
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthorPena, Vanessa
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVancoille, Eric
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage62101
dc.source.journalApplied Physics Letters
dc.source.issue6
dc.source.volume105
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/105/6/10.1063/1.4892468
imec.availabilityPublished - open access


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