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The influence of capping layer type on cobalt salicide formation in films and narrow lines

dc.contributor.authorBesser, Paul
dc.contributor.authorLauwers, Anne
dc.contributor.authorRoelandts, Nico
dc.contributor.authorMaex, Karen
dc.contributor.authorBlum, W.
dc.contributor.authorAlvis, R.
dc.contributor.authorStucchi, Michele
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.date.accessioned2021-09-30T11:28:05Z
dc.date.available2021-09-30T11:28:05Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2394
dc.sourceIIOimport
dc.titleThe influence of capping layer type on cobalt salicide formation in films and narrow lines
dc.typeProceedings paper
dc.contributor.imecauthorBesser, Paul
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage375
dc.source.endpage380
dc.source.conferenceAdvanced Interconnects and Contact Materials and Processes for Future Integrated Circuits
dc.source.conferencedate13/04/1998
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 514


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