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Interplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulated

dc.contributor.authorHussin, Razaidi
dc.contributor.authorAmoroso, Salvatore
dc.contributor.authorGerrer, Louis
dc.contributor.authorKaczer, Ben
dc.contributor.authorWeckx, Pieter
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVanderheyden, Annelies
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorAsenov, Asen
dc.date.accessioned2021-10-22T02:10:41Z
dc.date.available2021-10-22T02:10:41Z
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23975
dc.sourceIIOimport
dc.titleInterplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulated
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage3265
dc.source.endpage3273
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue9
dc.source.volume61
dc.identifier.urlhttp://dx.doi.org/10.1109/TED.2014.2336698
imec.availabilityPublished - imec


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