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Tensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulation

dc.contributor.authorKao, Frank
dc.contributor.authorVerhulst, Anne
dc.contributor.authorVan de Put, Maarten
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorVandenberghe, William
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-22T02:28:41Z
dc.date.available2021-10-22T02:28:41Z
dc.date.issued2014
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24032
dc.sourceIIOimport
dc.titleTensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulation
dc.typeJournal article
dc.contributor.imecauthorKao, Frank
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.source.peerreviewyes
dc.source.beginpage44505
dc.source.journalJournal of Applied Physics
dc.source.issue4
dc.source.volume115
dc.identifier.urlhttp://scitation.aip.org/docserver/fulltext/aip/journal/jap/115/4/1.4862806.pdf?expires=1391088229&id=id&accname=366702&checksum
imec.availabilityPublished - imec


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