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Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate

dc.contributor.authorLiang, Hu
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorCarlson, Eric Porter
dc.contributor.authorFavia, Paola
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorZhao, Ming
dc.contributor.authorThapa, Sarad Bahadur
dc.contributor.authorVancoille, Eric
dc.date.accessioned2021-10-22T03:04:26Z
dc.date.available2021-10-22T03:04:26Z
dc.date.issued2014
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24138
dc.sourceIIOimport
dc.titleGrowth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate
dc.typeJournal article
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorThapa, Sarad Bahadur
dc.contributor.imecauthorVancoille, Eric
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.source.peerreviewyes
dc.source.beginpage533
dc.source.endpage536
dc.source.journalPhysica Status Solidi C
dc.source.issue3_4
dc.source.volume11
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201300555/abstract
imec.availabilityPublished - imec
imec.internalnotesSpecial issue: 10th Int. Conf. Nitride Semiconductors (ICNS-10)


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