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Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

dc.contributor.authorMa, J.
dc.contributor.authorZhang, J.F.
dc.contributor.authorJi, Zhigang
dc.contributor.authorBenbakhti, Brahim
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorZheng, Xue Feng
dc.contributor.authorMitard, Jerome
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHall, S.
dc.contributor.authorRobertson, J.
dc.contributor.authorChalker, P.
dc.date.accessioned2021-10-22T03:17:33Z
dc.date.available2021-10-22T03:17:33Z
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24172
dc.sourceIIOimport
dc.titleCharacterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
dc.typeJournal article
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1307
dc.source.endpage1315
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue5
dc.source.volume61
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6786032&queryText%3Dma+characterization+negative+bias
imec.availabilityPublished - open access


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