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dc.contributor.authorMa, J
dc.contributor.authorZhang, J. F.
dc.contributor.authorJi, Zhigang
dc.contributor.authorBenbakhti, Brahim
dc.contributor.authorZhang, Wei
dc.contributor.authorMitard, Jerome
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHall, S.
dc.contributor.authorRobertson, J.
dc.contributor.authorChalker, P.
dc.date.accessioned2021-10-22T03:17:56Z
dc.date.available2021-10-22T03:17:56Z
dc.date.issued2014
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24173
dc.sourceIIOimport
dc.titleEnergy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs
dc.typeJournal article
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage160
dc.source.endpage162
dc.source.journalIEEE Electron Device Letters
dc.source.issue2
dc.source.volume35
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6705621
imec.availabilityPublished - open access


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