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Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GeSi1-x/SiO2/(100)Si structures with nm-thin GexSi1-x layers

dc.contributor.authorMadia, O.
dc.contributor.authorNguyen, A.P.D.
dc.contributor.authorThoan, N.H.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorSouriau, Laurent
dc.contributor.authorSlotte, J.
dc.contributor.authorTuomisto, F.
dc.date.accessioned2021-10-22T03:18:18Z
dc.date.available2021-10-22T03:18:18Z
dc.date.issued2014
dc.identifier.issn0169-4332
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24174
dc.sourceIIOimport
dc.titleImpact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GeSi1-x/SiO2/(100)Si structures with nm-thin GexSi1-x layers
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.source.peerreviewyes
dc.source.beginpage11
dc.source.endpage15
dc.source.journalApplied Surface Science
dc.source.volume291
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0169433213016668
imec.availabilityPublished - imec


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