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Trapping and reliability assessment in d-mode GaN-based MIS-HEMTs for power applications

dc.contributor.authorMeneghini, Matteo
dc.contributor.authorBisi, Davide
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorWu, Tian-Li
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-22T03:43:14Z
dc.date.available2021-10-22T03:43:14Z
dc.date.issued2014
dc.identifier.issn0885-8993
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24240
dc.sourceIIOimport
dc.titleTrapping and reliability assessment in d-mode GaN-based MIS-HEMTs for power applications
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage2199
dc.source.endpage2207
dc.source.journalIEEE Transactions on Power Electronics
dc.source.issue5
dc.source.volume29
dc.identifier.urlhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6558779
imec.availabilityPublished - imec
imec.internalnotesSpecial Issue on Wide Bandgap Power Devices and Their Applications


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