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Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering

dc.contributor.authorMerckling, Clement
dc.contributor.authorWaldron, Niamh
dc.contributor.authorJiang, Sijia
dc.contributor.authorGuo, Weiming
dc.contributor.authorCollaert, Nadine
dc.contributor.authorCaymax, Matty
dc.contributor.authorVancoille, Eric
dc.contributor.authorBarla, Kathy
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-22T03:44:51Z
dc.date.available2021-10-22T03:44:51Z
dc.date.issued2014-01
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24244
dc.sourceIIOimport
dc.titleHeteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVancoille, Eric
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage23710
dc.source.journalJournal of Applied Physics
dc.source.issue2
dc.source.volume115
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/115/2/10.1063/1.4862044
imec.availabilityPublished - imec


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