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Multiscale modeling of the electrostatic impact of self-assembled monolayers used as gate dielectric treatment in organic thin-film transistors

dc.contributor.authorMityashin, Alexander
dc.contributor.authorRoscioni, Otello Maria
dc.contributor.authorMuccioli, Luca
dc.contributor.authorZannoni, Claudio
dc.contributor.authorGeskin, Victor
dc.contributor.authorCornil, Jérôme
dc.contributor.authorJanssen, Dimitri
dc.contributor.authorSteudel, Soeren
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-22T03:54:38Z
dc.date.available2021-10-22T03:54:38Z
dc.date.issued2014
dc.identifier.issn1944-8244
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24267
dc.sourceIIOimport
dc.titleMultiscale modeling of the electrostatic impact of self-assembled monolayers used as gate dielectric treatment in organic thin-film transistors
dc.typeJournal article
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.identifier.doi10.1021/am503873f
dc.source.peerreviewyes
dc.source.beginpage15372
dc.source.endpage15378
dc.source.journalACS Applied Materials & Interfaces
dc.source.issue17
dc.source.volume6
imec.availabilityPublished - imec


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