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Advantages of different source/drain engineering on scaled UTBOX FD SOI nMOSFETs at high temperature operation

dc.contributor.authorNicoletti, Talitha
dc.contributor.authorDos Santos, Sara
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorVeloso, Anabela
dc.contributor.authorJurczak, Gosia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T04:18:06Z
dc.date.available2021-10-22T04:18:06Z
dc.date.issued2014
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24322
dc.sourceIIOimport
dc.titleAdvantages of different source/drain engineering on scaled UTBOX FD SOI nMOSFETs at high temperature operation
dc.typeJournal article
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage53
dc.source.endpage58
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume91
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110113002967
imec.availabilityPublished - open access


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