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Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications

dc.contributor.authorNourbakhsh, Amirhasan
dc.contributor.authorAgarwal Kumar, Tarun
dc.contributor.authorKlekachev, Alexander
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorCantoro, Mirco
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorHeyns, Marc
dc.contributor.authorVerhelst, Marian
dc.contributor.authorThean, Aaron
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-22T04:20:13Z
dc.date.available2021-10-22T04:20:13Z
dc.date.issued2014-08
dc.identifier.issn0957-4484
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24327
dc.sourceIIOimport
dc.titleChemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications
dc.typeJournal article
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVerhelst, Marian
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecVerhelst, Marian::0000-0003-3495-9263
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage345203
dc.source.journalNanotechnology
dc.source.issue34
dc.source.volume25
dc.identifier.urlhttp://iopscience.iop.org/0957-4484/25/34/345203
imec.availabilityPublished - imec


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