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Boron-doped selective silicon epitaxy: high efficiency and process simplification in interdigitated back contact cells

dc.contributor.authorRecaman Payo, Maria
dc.contributor.authorPosthuma, Niels
dc.contributor.authorUruena De Castro, Angel
dc.contributor.authorDebucquoy, Maarten
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-22T05:03:24Z
dc.date.available2021-10-22T05:03:24Z
dc.date.issued2014
dc.identifier.issn1062-7995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24427
dc.sourceIIOimport
dc.titleBoron-doped selective silicon epitaxy: high efficiency and process simplification in interdigitated back contact cells
dc.typeJournal article
dc.contributor.imecauthorRecaman Payo, Maria
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDebucquoy, Maarten
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDebucquoy, Maarten::0000-0001-5980-188X
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage711
dc.source.endpage725
dc.source.journalProgress in Photovoltaics Research and Applications
dc.source.issue7
dc.source.volume22
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pip.2427/abstract002/pip.2427/abstract
imec.availabilityPublished - imec


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