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Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications

dc.contributor.authorSasaki, Katia
dc.contributor.authorNicoletti, Talitha
dc.contributor.authorAlmeida, Luciano
dc.contributor.authorDos Santos, Sara
dc.contributor.authorNissimoff, Albert
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, Joao
dc.date.accessioned2021-10-22T05:29:07Z
dc.date.available2021-10-22T05:29:07Z
dc.date.issued2014
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24481
dc.sourceIIOimport
dc.titleImproved retention times in UTBOX nMOSFETs for 1T-DRAM applications
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage30
dc.source.endpage37
dc.source.journalSolid-State Electronics
dc.source.volume97
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110114000793
imec.availabilityPublished - imec


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