dc.contributor.author | Swerts, Johan | |
dc.contributor.author | Siew, Yong Kong | |
dc.contributor.author | Van Besien, Els | |
dc.contributor.author | Barbarin, Yohan | |
dc.contributor.author | Opsomer, Karl | |
dc.contributor.author | Boemmels, Juergen | |
dc.contributor.author | Tokei, Zsolt | |
dc.contributor.author | Van Elshocht, Sven | |
dc.date.accessioned | 2021-10-22T06:17:35Z | |
dc.date.available | 2021-10-22T06:17:35Z | |
dc.date.issued | 2014 | |
dc.identifier.issn | 0167-9317 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/24581 | |
dc.source | IIOimport | |
dc.title | Scalability of RuTiN barriers deposited by plasma-enhanced atomic layer deposition for advanced interconnects | |
dc.type | Journal article | |
dc.contributor.imecauthor | Swerts, Johan | |
dc.contributor.imecauthor | Siew, Yong Kong | |
dc.contributor.imecauthor | Van Besien, Els | |
dc.contributor.imecauthor | Opsomer, Karl | |
dc.contributor.imecauthor | Boemmels, Juergen | |
dc.contributor.imecauthor | Tokei, Zsolt | |
dc.contributor.imecauthor | Van Elshocht, Sven | |
dc.contributor.orcidimec | Van Besien, Els::0000-0002-5174-2229 | |
dc.contributor.orcidimec | Van Elshocht, Sven::0000-0002-6512-1909 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 235 | |
dc.source.endpage | 239 | |
dc.source.journal | Microelectronic Engineering | |
dc.source.volume | 120 | |
dc.identifier.url | http://www.sciencedirect.com/science/article/pii/S0167931713005911 | |
imec.availability | Published - open access | |