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Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells

dc.contributor.authorTang, Baojun
dc.contributor.authorZhang, Weidong
dc.contributor.authorDegraeve, Robin
dc.contributor.authorBreuil, Laurent
dc.contributor.authorBlomme, Pieter
dc.contributor.authorZhang, Jianfu
dc.contributor.authorJi, Zhigang
dc.contributor.authorZahid, Mohammed
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-22T06:24:55Z
dc.date.available2021-10-22T06:24:55Z
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24596
dc.sourceIIOimport
dc.titleEvaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage1299
dc.source.endpage1306
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue5
dc.source.volume61
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?reload=true&arnumber=6782720
imec.availabilityPublished - imec


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