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Experimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel

dc.contributor.authorTang, Baojun
dc.contributor.authorZhang, Weidong
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorZhang, Jianfu
dc.contributor.authorDegraeve, Robin
dc.contributor.authorJi, Zhigang
dc.contributor.authorArreghini, Antonio
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-22T06:25:28Z
dc.date.available2021-10-22T06:25:28Z
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24597
dc.sourceIIOimport
dc.titleExperimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage1501
dc.source.endpage1507
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue5
dc.source.volume61
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6782311
imec.availabilityPublished - imec


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