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Transient effects in accumulation mode p-channel SOI MOSFETs operating at 77K

dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorRotondaro, Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMagnusson, Ulf
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T12:43:32Z
dc.date.available2021-09-29T12:43:32Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/245
dc.sourceIIOimport
dc.titleTransient effects in accumulation mode p-channel SOI MOSFETs operating at 77K
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage519
dc.source.endpage523
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue4
dc.source.volume41
imec.availabilityPublished - imec


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