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Growth and in situ monitoring of GaN using IR interference effects

dc.contributor.authorConsidine, L.
dc.contributor.authorThrush, E. J.
dc.contributor.authorCrawley, J. A.
dc.contributor.authorJacobs, Koen
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorPark, G. H.
dc.contributor.authorHwang, S. J.
dc.contributor.authorSong, J. J.
dc.date.accessioned2021-09-30T11:36:23Z
dc.date.available2021-09-30T11:36:23Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2461
dc.sourceIIOimport
dc.titleGrowth and in situ monitoring of GaN using IR interference effects
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage192
dc.source.endpage198
dc.source.journalJournal of Crystal Growth
dc.source.issue1_4
dc.source.volume195
imec.availabilityPublished - open access
imec.internalnotesMetalorganic Vapour Phase Epitaxy 1998. June 1998; La Jolla, USA


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