dc.contributor.author | Tseng, Peter | |
dc.contributor.author | van Dorp, Dennis | |
dc.contributor.author | Lieten, Ruben | |
dc.contributor.author | Vereecken, Philippe | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-22T06:42:22Z | |
dc.date.available | 2021-10-22T06:42:22Z | |
dc.date.issued | 2014 | |
dc.identifier.issn | 1932-7447 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/24632 | |
dc.source | IIOimport | |
dc.title | Anodic etching of n-GaN epilayer into porous GaN and its photoelectrochemical properties | |
dc.type | Journal article | |
dc.contributor.imecauthor | van Dorp, Dennis | |
dc.contributor.imecauthor | Lieten, Ruben | |
dc.contributor.imecauthor | Vereecken, Philippe | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.contributor.orcidimec | van Dorp, Dennis::0000-0002-1085-4232 | |
dc.contributor.orcidimec | Vereecken, Philippe::0000-0003-4115-0075 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 29492 | |
dc.source.endpage | 29498 | |
dc.source.journal | Journal of Physical Chemistry C | |
dc.source.issue | 51 | |
dc.source.volume | 118 | |
dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/jp508314q | |
imec.availability | Published - imec | |