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Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorSimoen, Eddy
dc.contributor.authorNag, Manoj
dc.contributor.authorBhoolokam, Ajay
dc.contributor.authorGenoe, Jan
dc.contributor.authorGielen, Georges
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-22T06:50:10Z
dc.date.available2021-10-22T06:50:10Z
dc.date.issued2014
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24648
dc.sourceIIOimport
dc.titleDeep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode
dc.typeJournal article
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorGielen, Georges
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpage82112
dc.source.journalApplied Physics Letters
dc.source.issue8
dc.source.volume104
dc.identifier.urlhttp://dx.doi.org/10.1063/1.4867236
imec.availabilityPublished - imec


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