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Study of Cu diffusion in an Al-1%Si-0.5%Cu bond pad with an Al-1%Si bond wire attached using scanning electron microscopy

dc.contributor.authorCosemans, P.
dc.contributor.authorD'Haen, Jan
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorProost, Joris
dc.contributor.authorD'Olieslaeger, Marc
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorMaex, Karen
dc.contributor.authorDe Schepper, Luc
dc.date.accessioned2021-09-30T11:36:53Z
dc.date.available2021-09-30T11:36:53Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2464
dc.sourceIIOimport
dc.titleStudy of Cu diffusion in an Al-1%Si-0.5%Cu bond pad with an Al-1%Si bond wire attached using scanning electron microscopy
dc.typeJournal article
dc.contributor.imecauthorD'Haen, Jan
dc.contributor.imecauthorD'Olieslaeger, Marc
dc.contributor.imecauthorDe Ceuninck, Ward
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage309
dc.source.endpage315
dc.source.journalMicroelectronics Reliability
dc.source.issue3
dc.source.volume38
imec.availabilityPublished - imec


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