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Wafer based aberration metrology for lithographic systems using overlay measurements on targets imaged from phase-shift gratings

dc.contributor.authorvan Haver, Sven
dc.contributor.authorCoene, Wim M.J.
dc.contributor.authorD'have, Koen
dc.contributor.authorGeypen, Niels
dc.contributor.authorVan Adrichem, Paul
dc.contributor.authorde Winter, Laurens
dc.contributor.authorJanssen, Augustus J.E.M.
dc.contributor.authorCheng, Shaunee
dc.date.accessioned2021-10-22T07:13:23Z
dc.date.available2021-10-22T07:13:23Z
dc.date.issued2014
dc.identifier.issn0003-6935
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24696
dc.sourceIIOimport
dc.titleWafer based aberration metrology for lithographic systems using overlay measurements on targets imaged from phase-shift gratings
dc.typeJournal article
dc.contributor.imecauthorD'have, Koen
dc.contributor.imecauthorVan Adrichem, Paul
dc.contributor.orcidimecD'have, Koen::0000-0002-5195-9241
dc.source.peerreviewyes
dc.source.beginpage2562
dc.source.endpage2582
dc.source.journalApplied Optics
dc.source.issue12
dc.source.volume53
dc.identifier.urlhttp://www.opticsinfobase.org/ao/abstract.cfm?uri=ao-53-12-2562
imec.availabilityPublished - imec


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