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Can p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?

dc.contributor.authorVerhulst, Anne
dc.contributor.authorVerreck, Devin
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorVan de Put, Maarten
dc.contributor.authorSoree, Bart
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T07:56:55Z
dc.date.available2021-10-22T07:56:55Z
dc.date.issued2014
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24780
dc.sourceIIOimport
dc.titleCan p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?
dc.typeJournal article
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage43103
dc.source.journalApplied Physics Letters
dc.source.issue4
dc.source.volume105
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/105/4/10.1063/1.4891348
imec.availabilityPublished - open access


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