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dc.contributor.authorWaldron, Niamh
dc.contributor.authorMerckling, Clement
dc.contributor.authorTeugels, Lieve
dc.contributor.authorOng, Patrick
dc.contributor.authorIbrahim, Ansar
dc.contributor.authorSebaai, Farid
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorBarla, Kathy
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T08:08:25Z
dc.date.available2021-10-22T08:08:25Z
dc.date.issued2014
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24801
dc.sourceIIOimport
dc.titleInGaAs gate-all-around nanowire devices on 300mm substrates
dc.typeJournal article
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1097
dc.source.endpage1099
dc.source.journalIEEE Electron Device Letters
dc.source.issue11
dc.source.volume35
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6914587
imec.availabilityPublished - open access


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