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Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy

dc.contributor.authorAchour, H.
dc.contributor.authorCretu, B.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRoutoure, J.M.
dc.contributor.authorCarin, R.
dc.contributor.authorBenfdila, A.
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T18:29:48Z
dc.date.available2021-10-22T18:29:48Z
dc.date.issued2015
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24912
dc.sourceIIOimport
dc.titleIdentification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage6
dc.source.journalSolid-State Electronics
dc.source.volume112
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110115000593
imec.availabilityPublished - imec


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