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dc.contributor.authorBaert, Bruno
dc.contributor.authorGupta, Somya
dc.contributor.authorGencarelli, Federica
dc.contributor.authorLoo, Roger
dc.contributor.authorSimoen, Eddy
dc.contributor.authorNguyen, Duy
dc.date.accessioned2021-10-22T18:30:53Z
dc.date.available2021-10-22T18:30:53Z
dc.date.issued2015
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24948
dc.sourceIIOimport
dc.titleElectrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage65
dc.source.endpage70
dc.source.journalSolid-State Electronics
dc.source.volume110
dc.identifier.urlhttp://dx.doi.org/10.1016/j.sse.2015.01.007
imec.availabilityPublished - imec


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