Show simple item record

A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics

dc.contributor.authorBetti Beneventi, Giovanni
dc.contributor.authorReggiani, Susanna
dc.contributor.authorGnudi, Antonio
dc.contributor.authorGnani, Elena
dc.contributor.authorAlian, AliReza
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Anda
dc.contributor.authorThean, Aaron
dc.contributor.authorBaccarani, Giorgio
dc.date.accessioned2021-10-22T18:33:08Z
dc.date.available2021-10-22T18:33:08Z
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24989
dc.sourceIIOimport
dc.titleA TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics
dc.typeJournal article
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3645
dc.source.endpage3652
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume62
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7293162
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
31830.pdf
Size:
2.290Mb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record