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Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

dc.contributor.authorBisi, Davide
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.contributor.authorWu, Tian-Li
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-22T18:33:36Z
dc.date.available2021-10-22T18:33:36Z
dc.date.issued2015
dc.identifier.issn1862-6300
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24996
dc.sourceIIOimport
dc.titleTrapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1122
dc.source.endpage1129
dc.source.journalPhysica Status Solidi A
dc.source.issue5
dc.source.volume212
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201431744/abstract
imec.availabilityPublished - open access


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