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Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

dc.contributor.authorde Jamblinne de Meux, Albert
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-22T18:49:28Z
dc.date.available2021-10-22T18:49:28Z
dc.date.issued2015
dc.identifier.issn0022-3727
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25133
dc.sourceIIOimport
dc.titleComparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpage435104
dc.source.journalJournal of Physics D: Applied Physics
dc.source.issue43
dc.source.volume48
dc.identifier.urlhttp://stacks.iop.org/0022-3727/48/i=43/a=435104
imec.availabilityPublished - imec


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