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Relation between Raman frequency and stress in Si for surface and cross-section experiments in microelectronics components

dc.contributor.authorDe Wolf, Ingrid
dc.date.accessioned2021-10-22T18:53:27Z
dc.date.available2021-10-22T18:53:27Z
dc.date.issued2015
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25159
dc.sourceIIOimport
dc.titleRelation between Raman frequency and stress in Si for surface and cross-section experiments in microelectronics components
dc.typeJournal article
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.identifier.doi10.1063/1.4927133
dc.source.peerreviewyes
dc.source.beginpage53101
dc.source.journalJournal of Applied Physics
dc.source.volume118
dc.identifier.urlhttp://dx.doi.org/10.1063/1.4927133
imec.availabilityPublished - imec


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