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Staggered band gap n+In0.5Ga0.5As/p+ GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions

dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorSmets, Quentin
dc.contributor.authorEzzedini, Maher
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVerhulst, Anne
dc.contributor.authorDouhard, Bastien
dc.contributor.authorBender, Hugo
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMerckling, Clement
dc.contributor.authorHeyns, Marc
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T19:09:43Z
dc.date.available2021-10-22T19:09:43Z
dc.date.issued2015
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25245
dc.sourceIIOimport
dc.titleStaggered band gap n+In0.5Ga0.5As/p+ GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions
dc.typeJournal article
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewyes
dc.source.beginpage62
dc.source.endpage67
dc.source.journalJournal of Crystal Growth
dc.source.volume424
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0022024815003437
imec.availabilityPublished - imec


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