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Direct evidence of the overshoot suppression in Ta2O5-based resistive switching memory with an integrated access resistor

dc.contributor.authorFan, Jimmy
dc.contributor.authorZhang, Leqi
dc.contributor.authorCrotti, Davide
dc.contributor.authorWitters, Thomas
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGovoreanu, Bogdan
dc.date.accessioned2021-10-22T19:13:00Z
dc.date.available2021-10-22T19:13:00Z
dc.date.issued2015
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25261
dc.sourceIIOimport
dc.titleDirect evidence of the overshoot suppression in Ta2O5-based resistive switching memory with an integrated access resistor
dc.typeJournal article
dc.contributor.imecauthorCrotti, Davide
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGovoreanu, Bogdan
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1027
dc.source.endpage1029
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume36
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7210160
imec.availabilityPublished - open access


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