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Low frequency noise characterization of GeOx passivated Germanium MOSFETs

dc.contributor.authorFang, Wen
dc.contributor.authorSimoen, Eddy
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorMitard, Jerome
dc.contributor.authorSioncke, Sonja
dc.contributor.authorMertens, Hans
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLuo, Jun
dc.contributor.authorZhao, Chao
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T19:13:39Z
dc.date.available2021-10-22T19:13:39Z
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25264
dc.sourceIIOimport
dc.titleLow frequency noise characterization of GeOx passivated Germanium MOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage2078
dc.source.endpage2083
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue7
dc.source.volume62
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7116554
imec.availabilityPublished - imec


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