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Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

dc.contributor.authorGelinck, Gerwin
dc.contributor.authorCobb, Brian
dc.contributor.authorVan Breemen, Albert
dc.contributor.authorMyny, Kris
dc.date.accessioned2021-10-22T19:21:16Z
dc.date.available2021-10-22T19:21:16Z
dc.date.issued2015
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25299
dc.sourceIIOimport
dc.titleLarge scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors
dc.typeJournal article
dc.contributor.imecauthorVan Breemen, Albert
dc.contributor.imecauthorMyny, Kris
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage74003
dc.source.journalSemiconductor Science and Technology
dc.source.volume30
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/0268-1242/30/7/074003/meta;jsessionid=1663296B4DB02A2EF15CFAD706BBA6E7.c1.iopscience.c
imec.availabilityPublished - open access


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