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H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

dc.contributor.authorGoux, Ludovic
dc.contributor.authorKim, J. Y.
dc.contributor.authorMagyari-Kope, B.
dc.contributor.authorNishi, Y.
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-22T19:27:34Z
dc.date.available2021-10-22T19:27:34Z
dc.date.issued2015
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25326
dc.sourceIIOimport
dc.titleH-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage124501
dc.source.journalJournal of Applied Physics
dc.source.issue12
dc.source.volume117
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/117/12/10.1063/1.4915946
imec.availabilityPublished - imec


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