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Physical characterization of hafnium aluminates dielectrics deposited by atomic layer deposition

dc.contributor.authorHuanca, Danilo R.
dc.contributor.authorChristiano, V.
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorDos Santos Filho, Sebastio G.
dc.date.accessioned2021-10-22T19:46:49Z
dc.date.available2021-10-22T19:46:49Z
dc.date.issued2015-09
dc.identifier.issn1807-1953
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25401
dc.sourceIIOimport
dc.titlePhysical characterization of hafnium aluminates dielectrics deposited by atomic layer deposition
dc.typeJournal article
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.source.peerreviewyes
dc.source.beginpage49
dc.source.endpage58
dc.source.journalJournal of Integrated Circuits and Systems
dc.source.issue1
dc.source.volume10
dc.identifier.urlhttp://www.sbmicro.org.br/jics/
imec.availabilityPublished - imec


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