Show simple item record

Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs

dc.contributor.authorKudina, Valeriya
dc.contributor.authorGarbar, Nicolai
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T20:15:15Z
dc.date.available2021-10-22T20:15:15Z
dc.date.issued2015
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25495
dc.sourceIIOimport
dc.titleImpact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage37
dc.source.endpage44
dc.source.journalSolid-State Electronics
dc.source.volume105
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110114002937
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record