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High quality InGaAs/AlGaAs lasers grown on Ge substrates

dc.contributor.authorD'Hondt, Mark
dc.contributor.authorYu, Zong-Qiang
dc.contributor.authorDepreter, Bart
dc.contributor.authorSys, Carl
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorMijlemans, P.
dc.date.accessioned2021-09-30T11:53:17Z
dc.date.available2021-09-30T11:53:17Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2554
dc.sourceIIOimport
dc.titleHigh quality InGaAs/AlGaAs lasers grown on Ge substrates
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage655
dc.source.endpage659
dc.source.journalJournal of Crystal Growth
dc.source.issue1_4
dc.source.volume195
imec.availabilityPublished - open access
imec.internalnotesMetalorganic Vapor Phase Epitaxy 1998. 9th International Conference. 31 May - 4 June 1998; La Jolla, Ca, USA


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