dc.contributor.author | Lin, Dennis | |
dc.contributor.author | Asselberghs, Inge | |
dc.contributor.author | Vais, Abhitosh | |
dc.contributor.author | Arutchelvan, G. | |
dc.contributor.author | Delabie, Annelies | |
dc.contributor.author | Heyns, Marc | |
dc.contributor.author | Mocuta, Anda | |
dc.contributor.author | Radu, Iuliana | |
dc.contributor.author | Thean, Aaron | |
dc.date.accessioned | 2021-10-22T20:37:17Z | |
dc.date.available | 2021-10-22T20:37:17Z | |
dc.date.issued | 2015 | |
dc.identifier.issn | 0167-9317 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/25564 | |
dc.source | IIOimport | |
dc.title | Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors | |
dc.type | Journal article | |
dc.contributor.imecauthor | Lin, Dennis | |
dc.contributor.imecauthor | Asselberghs, Inge | |
dc.contributor.imecauthor | Vais, Abhitosh | |
dc.contributor.imecauthor | Delabie, Annelies | |
dc.contributor.imecauthor | Heyns, Marc | |
dc.contributor.imecauthor | Radu, Iuliana | |
dc.contributor.imecauthor | Thean, Aaron | |
dc.contributor.orcidimec | Vais, Abhitosh::0000-0002-0317-7720 | |
dc.contributor.orcidimec | Radu, Iuliana::0000-0002-7230-7218 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 314 | |
dc.source.endpage | 317 | |
dc.source.journal | Microelectronic Engineering | |
dc.source.volume | 147 | |
dc.identifier.url | http://www.sciencedirect.com/science/article/pii/S0167931715003512 | |
imec.availability | Published - imec | |
imec.internalnotes | Paper from INFOS 2015 | |