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Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors

dc.contributor.authorLin, Dennis
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorVais, Abhitosh
dc.contributor.authorArutchelvan, G.
dc.contributor.authorDelabie, Annelies
dc.contributor.authorHeyns, Marc
dc.contributor.authorMocuta, Anda
dc.contributor.authorRadu, Iuliana
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T20:37:17Z
dc.date.available2021-10-22T20:37:17Z
dc.date.issued2015
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25564
dc.sourceIIOimport
dc.titleDeducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors
dc.typeJournal article
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.source.peerreviewyes
dc.source.beginpage314
dc.source.endpage317
dc.source.journalMicroelectronic Engineering
dc.source.volume147
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931715003512
imec.availabilityPublished - imec
imec.internalnotesPaper from INFOS 2015


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