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Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy

dc.contributor.authorMaeda, Tatsuro
dc.contributor.authorJevasuwan, Wipakorn
dc.contributor.authorHattori, Hiroyuki
dc.contributor.authorUchida, Noriyuki
dc.contributor.authorMiura, Shu
dc.contributor.authorTanaka, Masatoshi
dc.contributor.authorSantos, Nuno D. M.
dc.contributor.authorVantomme, Andre
dc.contributor.authorLocquet, Jean-Pierre
dc.contributor.authorLieten, Ruben R.
dc.date.accessioned2021-10-22T20:46:09Z
dc.date.available2021-10-22T20:46:09Z
dc.date.issued2015
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25590
dc.sourceIIOimport
dc.titleUltrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy
dc.typeJournal article
dc.contributor.imecauthorVantomme, Andre
dc.source.peerreviewyes
dc.source.beginpage04DA07
dc.source.journalJapanese Journal of Applied Physics
dc.source.issue4
dc.source.volume54
dc.identifier.urlhttp://iopscience.iop.org/article/10.7567/JJAP.54.04DA07/pdf
imec.availabilityPublished - imec


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