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Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation

dc.contributor.authorMarino, F.A.
dc.contributor.authorBisi, D.
dc.contributor.authorMeneghini, M.
dc.contributor.authorVerzellesi, G.
dc.contributor.authorZanoni, E.
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorMeneghesso, G.
dc.date.accessioned2021-10-22T20:55:22Z
dc.date.available2021-10-22T20:55:22Z
dc.date.issued2015
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25617
dc.sourceIIOimport
dc.titleAnalysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation
dc.typeJournal article
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.source.peerreviewyes
dc.source.beginpage9
dc.source.endpage14
dc.source.journalSolid-State Electronics
dc.source.volume113
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110115001446
imec.availabilityPublished - imec
imec.internalnotesSelected papers from ESSDERC 2014


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