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dc.contributor.authorMeddeb, Hosny
dc.contributor.authorBearda, Twan
dc.contributor.authorAbdelraheem, Yaser
dc.contributor.authorEzzaouia, H.
dc.contributor.authorGordon, Ivan
dc.contributor.authorSzlufcik, Jozef
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-22T21:00:29Z
dc.date.available2021-10-22T21:00:29Z
dc.date.issued2015
dc.identifier.issn0022-3727
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25631
dc.sourceIIOimport
dc.titleStructural, hydrogen bonding and in-situ study of the effect of hydrogen dilution on the passivation by amorphous silicon of n-type crystalline (100) silicon surfaces
dc.typeJournal article
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorSzlufcik, Jozef
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage415301
dc.source.journalJournal of Physics D: Applied Physics
dc.source.issue41
dc.source.volume48
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/0022-3727/48/41/415301;jsessionid=FAD15600B0EBD7A6BB1B8DB05DCC6913.c1
imec.availabilityPublished - imec


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